1/9 not for new design november 2000 this is information on a product still in production but not recommended for new designs. M2732A nmos 32 kbit (4kb x 8) uv eprom fast access time: 200ns extended temperature range single 5v supply voltage low standby current: 35ma max inputs and outputs ttl compatible during read and program completely static description the M2732A is a 32,768 bit uv erasable and elec- trically programmable memory eprom. it is orga- nized as 4,096 words by 8 bits. the M2732A with its single 5v power supply and with an access time of 200 ns, is ideal suited for applications where fast turn around and pattern experimentation are important requirements. the M2732A is housed in a 24 pin window ce- ramic frit-seal dual-in-line package. the trans- parent lid allows the user to expose the chip to ultraviolet light to erase the bit pattern. a new pat- tern can be then written to the device by following the programming procedure. figure 1. logic diagram ai00780b 12 a0-a11 q0-q7 v cc M2732A gv pp e v ss 8 1 24 fdip24w (f)
q2 v ss a3 a0 q0 q1 a2 a1 gv pp q5 a10 e q3 a11 q7 q6 q4 a4 v cc a7 ai00781 M2732A 8 1 2 3 4 5 6 7 9 10 11 12 20 19 18 17 16 15 a6 a5 a9 a8 23 22 21 14 13 24 figure 2. dip pin connections symbol parameter value unit t a ambient operating temperature grade 1 grade 6 0 to 70 C40 to 85 c t bias temperature under bias grade 1 grade 6 C10 to 80 C50 to 95 c t stg storage temperature C65 to 125 c v io input or output voltages C0.6 to 6 v v cc supply voltage C0.6 to 6 v v pp program supply voltage C0.6 to 22 v note: except for the rating "operating temperature range", stresses above those listed in the table "absolute maximum ratings" may c ause permanent damage to the device. these are stress ratings only and operation of the device at these or any other conditions abov e those indicated in the operating sections of this specification is not implied. exposure to absolute maximum rating conditions for ex tended periods may affect device reliability. refer also to the stmicroelectronics sure program and other relevant quality documents. table 2. absolute maximum ratings device operation the six modes of operation for the M2732A are listed in the operating modes table. a single 5v power supply is required in the read mode. all inputs are ttl level except for v pp. read mode the M2732A has two control functions, both of which must be logically satisfied in order to obtain data at the outputs. chip enable ( e) is the power control and should be used for device selection. output enable ( g) is the output control and should be used to gate data to the output pins, inde- pendent of device selection. assuming that the addresses are stable, address access time (t avaq ) is equal to the delay from e to output (t elqv ). data is available at the outputs after the falling edge of g, assuming that e has been low and the addresses have been stable for at least t avqv -t glqv . standby mode the M2732A has a standby mode which reduces the active power current by 70 %, from 125 ma to 35 ma. the M2732A is placed in the standby mode by applying a ttl high signal to e input. when in standby mode, the outputs are in a high impedance state, independent of the gv pp input. two line output control because M2732As are usually used in larger mem- ory arrays, this product features a 2 line control function which accommodates the use of multiple memory connection. the two line control function allows: a. the lowest possible memory power dissipation, b. complete assurance that output bus contention will not occur. to most efficiently use these two control lines, it is recommended that e be decoded and used as the primary device selecting function, while g should be made a common connection to all devices in the array and connected to the read line from the system control bus. this ensures that all deselected memory devices are in their low power standby mode and that the output pins are only active when data is required from a particular memory device. M2732A 2/9
programming when delivered, and after each erasure, all bits of the M2732A are in the 1" state. data is introduced by selectively programming 0s" into the desired bit locations. although only 0s will be pro- grammed, both 1s and 0s can be presented in the data word. the only way to change a 0" to a 1" is by ultraviolet light erasure. the M2732A is in the programming mode when the gv pp input is at 21v. a 0.1 m f capacitor must be placed across gv pp and ground to suppress spu- rious voltage transients which may damage the device. the data to be programmed is applied, 8 bits in parallel, to the data output pins. the levels required for the address and data inputs are ttl. when the address and data are stable, a 50ms, active low, ttl program pulse is applied to the e input. a program pulse must be applied at each address location to be programmed. any location can be programmed at any time - either individually, sequentially, or at random. the program pulse has a maximum width of 55ms. the M2732A must not be programmed with a dc signal applied to the e input. programming of multiple M2732As in parallel with the same data can be easily accomplished due to the simplicity of the programming requirements. inputs of the paralleled M2732As may be con- nected together when they are programmed with the same data. a low level ttl pulse applied to the e input programs the paralleled 2732as. program inhibit programming of multiple M2732As in parallel with different data is also easily accomplished. except for e, all like inputs (including gv pp ) of the parallel M2732As may be common. a ttl level program pulse applied to a M2732As e input with gv pp at 21v will program that M2732A. a high level e input inhibits the other M2732As from being pro- grammed. program verify a verify should be performed on the programmed bits to determine that they were correctly pro- grammed. the verify is carried out with gv pp and e at v il . erasure operation the erasure characteristics of the M2732A are such that erasure begins when the cells are ex- posed to light with wavelengths shorter than ap- proximately 4000 ?. it should be noted that sunlight and certain types of fluorescent lamps have wave- lengths in the 3000-4000 ? range. research shows that constant exposure to room level fluorescent lighting could erase a typical M2732A in approxi- mately 3 years, while it would take approximately 1 week to cause erasure when exposed to the direct sunlight. if the M2732A is to be exposed to these types of lighting conditions for extended pe- riods of time, it is suggested that opaque labels be put over the M2732A window to prevent uninten- tional erasure. the recommended erasure procedure for the M2732A is exposure to shortwave ultraviolet light which has a wavelength of 2537 ?. the integrated dose (i.e. uv intensity x exposure time) for erasure should be a minimum of 15 w-sec/cm 2 . the era- sure time with this dosage is approximately 15 to 20 minutes using an ultraviolet lamp with 12000 m w/cm 2 power rating. the M2732A should be placed within 2.5 cm of the lamp tubes during erasure. some lamps have a filter on their tubes which should be removed before erasure. mode e gv pp v cc q0 - q7 read v il v il v cc data out program v il pulse v pp v cc data in verify v il v il v cc data out program inhibit v ih v pp v cc hi-z standby v ih xv cc hi-z note: x = v ih or v il . table 3. operating modes M2732A 3/9
ai00827 2.4v 0.45v 2.0v 0.8v figure 3. ac testing input output waveforms input rise and fall times 20ns input pulse voltages 0.45v to 2.4v input and output timing ref. voltages 0.8v to 2.0v ac measurement conditions ai00828 1.3v out c l = 100pf c l includes jig capacitance 3.3k w 1n914 device under test figure 4. ac testing load circuit note that output hi-z is defined as the point where data is no longer driven. symbol parameter test condition min max unit c in input capacitance (except gv pp )v in = 0v 6 pf c in1 input capacitance ( gv pp )v in = 0v 20 pf c out output capacitance v out = 0v 12 pf note: 1. sampled only, not 100% tested. table 4. capacitance (1) (t a = 25 c, f = 1 mhz ) ai00782 taxqx tehqz data out a0-a11 e g q0-q7 tavqv tghqz tglqv telqv valid hi-z figure 5. read mode ac waveforms M2732A 4/9
symbol alt parameter test condition M2732A unit -2, -20 blank, -25 -3 -4 min max min max min max min max t avqv t acc address valid to output valid e = v il , g = v il 200 250 300 450 ns t elqv t ce chip enable low to output valid g = v il 200 250 300 450 ns t glqv t oe output enable low to output valid e = v il 100 100 150 150 ns t ehqz (2) t df chip enable high to output hi-z g = v il 0 60 0 60 0 130 0 130 ns t ghqz (2) t df output enable high to output hi-z e = v il 0 60 0 60 0 130 0 130 ns t axqx t oh address transition to output transition e = v il , g = v il 0000ns notes: 1. v cc must be applied simultaneously with or before v pp and removed simultaneously or after v pp . 2. sampled only, not 100% tested. table 6. read mode ac characteristics (1) (t a = 0 to 70 c or C40 to 85 c; v cc = 5v 5% or 5v 10%; v pp = v cc ) symbol parameter test condition value unit min max i li input leakage current 0 v in v cc 10 m a i lo output leakage current v out = v cc 10 m a i cc supply current e = v il , g = v il 125 ma i cc1 supply current (standby) e = v ih , g = v il 35 ma v il input low voltage C0.1 0.8 v v ih input high voltage 2 v cc + 1 v v ol output low voltage i ol = 2.1ma 0.45 v v oh output high voltage i oh = C400 m a 2.4 v note: 1. v cc must be applied simultaneously with or before v pp and removed simultaneously or after v pp . table 5. read mode dc characteristics (1) (t a = 0 to 70 c or C40 to 85 c; v cc = 5v 5% or 5v 10%; v pp = v cc ) M2732A 5/9
symbol parameter test condition min max units i li input leakage current v il v in v ih 10 m a i cc supply current e = v il , g = v il 125 ma i pp program current e = v il , g = v pp 30 ma v il input low voltage C0.1 0.8 v v ih input high voltage 2 v cc + 1 v v ol output low voltage i ol = 2.1ma 0.45 v v oh output high voltage i oh = C400 m a 2.4 v note: 1. v cc must be applied simultaneously with or before v pp and removed simultaneously or after v pp . table 7. programming mode dc characteristics (1) (t a = 25 c; v cc = 5v 5%; v pp = 21v 0.5v) symbol alt parameter test condition min max units t avel t as address valid to chip enable low 2 m s t qvel t ds input valid to chip enable low 2 m s t vphel t oes v pp high to chip enable low 2 m s t vpl1vpl2 t prt v pp rise time 50 ns t eleh t pw chip enable program pulse width 45 55 ms t ehqx t dh chip enable high to input transition 2 m s t ehvpx t oeh chip enable high to v pp transition 2 m s t vplel t vr v pp low to chip enable low 2 m s t elqv t dv chip enable low to output valid e = v il , g = v il 1 m s t ehqz t df chip enable high to output hi-z 0 130 ns t ehax t ah chip enable high to address transition 0ns note: 1. v cc must be applied simultaneously with or before v pp and removed simultaneously or af ter v pp . table 8. programming mode ac characteristics (1) (t a = 25 c; v cc = 5v 5%; v pp = 21v 0.5v) M2732A 6/9
ai00783 tvplel program data in a0-a11 e gv pp q0-q7 data out tavel tqvel tvphel tehqx tehvpx teleh telqv tehax tehqz verify valid figure 6. programming and verify modes ac waveforms speed and v cc tolerance -2 200 ns, 5v 5% blank 250 ns, 5v 5% -3 300 ns, 5v 5% -4 450 ns, 5v 5% -20 200 ns, 5v 10% -25 250 ns, 5v 10% package f fdip24w temperature range 1 0 to 70 c 6 C40 to 85 c example: M2732A -2 f 1 ordering information scheme for a list of available options (speed, v cc tolerance, package, etc...) refer to the current memory shortform catalogue. for further information on any aspect of this device, please contact stmicroelectronics sales office nearest to you. M2732A 7/9
fdipw-a a2 a1 a l b1 b e1 d s e1 e n 1 c a ea e3 ? symb mm inches typ min max typ min max a 5.71 0.225 a1 0.50 1.78 0.020 0.070 a2 3.90 5.08 0.154 0.200 b 0.40 0.55 0.016 0.022 b1 1.17 1.42 0.046 0.056 c 0.22 0.31 0.009 0.012 d 32.30 1.272 e 15.40 15.80 0.606 0.622 e1 13.05 13.36 0.514 0.526 e1 2.54 C C 0.100 C C e3 27.94 C C 1.100 C C ea 16.17 18.32 0.637 0.721 l 3.18 4.10 0.125 0.161 s 1.52 2.49 0.060 0.098 ? 7.11 C C 0.280 C C a 4 15 4 15 n24 24 draw ing is not to scale fdip24w - 24 pin ceramic frit-seal dip, with window M2732A 8/9
9/9 M2732A information furnished is believed to be accurate and reliable. however, stmicroelectronics assumes no responsibility for the co nsequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. no license is granted by implication or otherwise under any patent or patent rights of stmicroelectronics. specifications mentioned in this publicati on are subject to change without notice. this publication supersedes and replaces all information previously supplied. stmicroelectronics prod ucts are not authorized for use as critical components in life support devices or systems without express written approval of stmicroelectro nics. the st logo is registered trademark of stmicroelectronics all other names are the property of their respective owners ? 2000 stmicroelectronics - all rights reserved stmicroelectronics group of companies australia - brazil - china - finland - france - germany - hong kong - india - italy - japan - malaysia - malta - morocco - singapore - spain - sweden - switzerland - united kingdom - u.s.a. www.st.com
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